[Large chip] field effect N-mos tube si2302 SOT-23 silk screen S2 A2SHB 2302
Specification
Description
Seller Info
| Brand | Long power |
| Model | CJ2302 |
| Encapsulation | SOT-23 |
| Batch number | 20 + |
| Transistor Type | N-MOS |
| Drain-source voltage (Vdss) | 20V |
| Drain current (Id) | 4.5A |
| Drain-source conduction resistance (RDS On) | 28MR |
| Gate-source voltage (Vgs) | 10V |
| Reverse Recovery Time | 11ns |
| Maximum dissipation power | 1500 |
| Configuration type | Patch |
| Operating temperature range | -55 ° to 150 ° |
| Installation type | Patch |
| Application Field | Wearable device |
| Conductive mode | Enhanced |
| Type | Insulated Gate (MOSFETs) |
